vp0104 features ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? high input impedance and high gain ? excellent thermal stability ? integral source-to-drain diode applications ? motor controls ? converters ? amplifers ? switches ? power supply circuits ? drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) general description the supertex vp0104 is an enhancement-mode (normally- off) transistor that utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffcient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55c to +150c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. pin confguration p-channel enhancement-mode vertical dmos fets gate source drain product marking yy = year sealed ww = week sealed = ?green? packaging sivp 0104 yyww to-92 (n3) to-92 (n3) package may or may not include the following marks: si or ordering information device package wafer / die options to-92 nw (die in wafer form) nj (die on adhesive tape) nd (die in waffe pack) vp0104 VP0104N3-G vp1504nw vp1504nj vp1504nd for packaged products, -g indicates package is rohs compliant (green). devices in wafer / die form are rohs compliant (green). refer to die specifcation vf15 for layout and dimensions. product summary device bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (ma) VP0104N3-G -40 8.0 -500 supertex inc. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
2 vp0104 electrical characteristics (t a = 25c unless otherwise specifed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage -40 - - v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -1.5 - -3.5 v v gs = v ds , i d = -1.0ma v gs(th) change in v gs(th) with temperature - 5.8 6.5 mv/ o c v gs = v ds , i d = -1.0ma i gss gate body leakage current - -1.0 -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - -10 a v gs = 0v, v ds = max rating - - -1.0 ma v ds = 0.8 max rating, v gs = 0v, t a = 125 o c i d(on) on-state drain current -0.15 -0.25 - a v gs = -5.0v, v ds = -25v -0.5 -1.2 - v gs = -10v, v ds = -25v r ds(on) static drain-to-source on-state resistance - 11 15 v gs = -5.0v, i d = -100ma - 6.0 8.0 v gs = -10v, i d = -500ma r ds(on) change in r ds(on) with temperature - 0.55 1.0 %/ o c v gs = -10v, i d = -500ma g fs forward transconductance 150 190 - mmho v ds = -25v, i d = -500ma c iss input capacitance - 45 60 pf v gs = 0v, v ds = -25v, f = 1.0mhz c oss common source output capacitance - 22 30 c rss reverse transfer capacitance - 3.0 8.0 t d(on) turn-on delay time - 4.0 6.0 ns v dd = -25v, i d = -500ma, r gen = 25? t r rise time - 3.0 10 t d(off) turn-off delay time - 8.0 12 t f fall time - 4.0 10 v sd diode forward voltage drop - -1.2 -2.0 v v gs = 0v, i sd = -1.0a t rr reverse recovery time - 400 - ns v gs = 0v, i sd = -1.0a notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. switching waveforms and test circuit thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (ma) power dissipation @t c = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr ? (ma) i drm (ma) to-92 -250 -800 1.0 125 170 -250 -800 notes: ? i d (continuous) is limited by max rated t j . 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v vdd r gen 0v -10v supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
3 vp0104 typical performance curves t ransconductance vs. drain current 0 -0.2 -0.4 -0.6 -0.8 -1.0 i d (amperes) g fs (millisiemens ) 250 200 150 100 50 0 t a = 125 o c t a = 25 o c t a = -55 o c v ds = -25v maximum rated safe operating area i d (amperes) -0.1 -1.0 -10 -100 v ds (volts) -10 -1.0 -0.1 -0.01 to -92 (dc) t c = 25 o c output characteristics i d (amperes) 0 -10 -20 -30 -40 -2.0 -1.6 -1.2 -0.8 -0.4 0 v ds (volts) v gs = -10v -8v -4v -6v output characteristics i d (amperes) 0 -10 -20 -30 -40 -50 -2.0 -1.6 -1.2 -0.8 -0.4 0 v ds (volts) 0 25 50 75 100 125 150 power dissipation vs. case t emperature 2.0 1.0 0 to -92 p d (watts) t c ( o c) thermal response characteristics 0.001 0.01 0.1 1.0 10 1.0 0.8 0.6 0.4 0.2 0 to -92 p d = 1w t c = 25 o c t p (seconds) thermal resistance (normalized) -5v -7v -9v v gs = -10v -8v -4v -6v -5v -7v -9v supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
4 vp0104 typical performance curves (cont.) bv dss v ariation with t emperature bv dss (normalized) 1.10 1.06 1.02 0.98 0.94 0.90 -50 0 50 100 150 t j ( o c) tr ansfer characteristic s on-resistance vs. drain current r ds(on) (ohms) 50 40 30 20 10 0 i d (amperes) 0 -0.3 -0.6 -0.9 -1.2 -1.5 v gs = -5.0v v gs = -10v -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 v gs (volts) v ds = -25v t a = -55 o c t a = 25 o c t a = 125 o c v ds = -10v v ds = -40v 70pf 70pf -50 0 50 100 150 -1.6 -1.4 -1.2 -1.0 -0.8 0.6 v (th) and r ds v ariation with t emperature capacitance vs. drain-to-source vo ltage gate drive dynamic characteristic s v ds (volts) 0 -10 -20 -30 -40 -10 -8 -6 -4 -2 0 v gs(th) (normalized) v gs (volts) c (picofarads) 100 75 50 25 0 f = 1mhz c iss c oss c rss -1.6 -1.4 -1.2 -1.0 -0.8 r ds(on) (normalized) r ds(on) @ 10v , -0.5a r ds(on) @ -5v , -0.1a v (th) @ -1.0ma 0 0.2 0.4 0.6 0.8 1.0 q g (nanocoulombs ) 45pf t j ( o c) supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
5 vp0104 (the package drawing (s) in this data sheet may not refect the most current specifcations. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-vp0104 b030411 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not specifed in the jedec drawing. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to92n3, version e041009. seating plane 1 2 3 front v iew side v iew bottom v iew e1 e d e1 l e c 1 2 3 b a supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. (website: http//www .supertex.com) ?201 1 supertex inc. a ll rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
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